Part # HUF75639P3 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S356A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

Part Details:

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs · 56A, 100V These N-Channel power MOSFETs · Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABERTM innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, - resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the · Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored · UIS Rating Curve charge. It was designed for use in applications where power efficiency is important, such as switching regulators, · Related Literature switching converters, motor drivers, relay drivers, low- - TB334, "Guidelines for Soldering Surface Mount voltage bus switches, and power management in portable Components to PC Boards" and battery-operated products. Symbol Formerly developmental type TA75639. D Ordering Information PART NUMBER PACKAGE BRAND G HUF75639G3 TO-247 75639G HUF75639P3 TO-220AB 75639P S HUF75639S3S TO-263AB 75639S HUF75639S3 TO-262AA 75639S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST. Packaging JEDEC STYLE TO-247 JEDEC TO-220AB SOURCE

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HUF75639P3.pdf Datasheet