Part # 2SC6000 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type

Part Details:

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications Unit: mm DC-DC Converter Applications · High DC current gain: hFE = 250 to 400 (IC = 2.5 A) · Low collector-emitter saturation: VCE (sat) = 0.18 V (max) · High speed switching: tf = 13 ns (typ) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEX 120 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V DC IC 7.0 Collector current A Pulse ICP 10.0 Base current IB 0.5 A JEDEC Collector power Tc = 25°C P dissipation C 20 W JEITA Junction temperature Tj 150 °C TOSHIBA 2-7J1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) 1 2005-02-01 2SC6000 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min

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2SC6000.pdf Datasheet