Part # 2SC2880 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

Part Details:

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.0 to 2.0 W (mounted on a ceramic substrate) · Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 10 mA PC 500 PW-MINI Collector power dissipation PC mW JEDEC 800 (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10

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2SC2880.pdf Datasheet