Part # FDJ1028N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSF


Part Details:

FDJ1028N N-Channel 2.5 August 2006 FDJ1028NN-Channel 2.5 Vgs Specified PowerTrench® MOSFET Features Applications 3.2 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V Battery management RDS(ON) = 130 m @ VGS = 2.5 V Vgs Specified P Low gate charge General Description High performance trench technology for extremely low This dual N-Channel 2.5V specified MOSFET uses Fairchild s RDS(ON) advanced low voltage PowerTrench process. Packaged in FLMP FLMP SC75 package: Enhanced thermal performance in SC75, the RDS(ON) and thermal properties of the device are industry-standard package size optimized for battery power management applications. owerT Bottom Drain Contact S2 S1 4 3 renc G1 5 2 h ® G2 6 1 MOSFET S2 S1 Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current ­ Continuous


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FDJ1028N.pdf Datasheet