Part # FDMS3500 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDMS3500_Preliminary.fm


Part Details:

FDMS3500 N-Channel Power Trench April 2008 FDMS3500 tm N-Channel Power Trench® MOSFET 75V, 49A, 14.5mFeatures General Description Max rDS(on) = 14.5m at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench® process that has Max rDS(on) = 16.3m at VGS = 4.5V, ID = 10A been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance. MSL1 robust package design 100% UIL Tested Application RoHS Compliant DC - DC Conversion ® MOSFET Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 75 V VGS Gate to Source Voltage ±20


Please click the following link to download the datasheet:

FDMS3500.pdf Datasheet