Part # 2SC5266A datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type

Part Details:

2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications Unit: mm · High breakdown voltage: VCEO = 400 V · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 50 Collector current mA Pulse ICP 100 Base current IB 25 mA Ta = 25°C 500 Collector power dissipation Ta = 25°C PC mW JEDEC 1000 (Note) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t)

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2SC5266A.pdf Datasheet