Part # FQB12N60C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB12N60C FQI12N60C 600V N-Channel MOSF

Part Details:

FQB12N60C / FQI12N60C September 2007 QFET ® FQB12N60C / FQI12N60C600V N-Channel MOSFET Features Description · 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 21pF) stripe, DMOS technology. 60 · Fas t switching This advanced technology has been especially tailored to 0V N-Chann · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. el MOSFE D D T G D2-PAK I2-PAK G S FQB Series FQI Series G D S S Absolute Maximum Ratings Symbol Parameter FQB12N60C/FQI12N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 12 A - Continuous (TC = 100°C) 7.4 A IDM Drain Current - Pulsed

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FQB12N60C.pdf Datasheet