Part # 36DR432AD M36DR432B datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: 32 MBIT (2MB X16, DUAL BANK, PAGE) FLASH MEMORY AND 4 MBIT (256KB X16) SRAM, MULTIPLE MEMORY PRODUC


Part Details:

M36DR432ADM36DR432BD 32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY s Multiple Memory Product Figure 1. Package ­ 1 bank of 32 Mbit (2Mb x16) Flash Memory­ 1 bank of 4 Mbit (256Kb x16) SRAM s SUPPLY VOLTAGE ­ VDDF = VDDS =1.65V to 2.2V­ VPPF = 12V for Fast Program (optional) s ACCESS TIMES: 85ns, 100ns, 120ns FBGA s LOW POWER CONSUMPTION s ELECTRONIC SIGNATURE ­ Manufacturer Code: 0020h Stacked LFBGA66 (ZA) ­ Top Device Code, M36DR432AD: 00A0h 12 x8mm ­ Bottom Device Code, M36DR432BD: 00A1h FLASH MEMORY s MEMORY BLOCKS ­ Dual Bank Memory Array: 4 Mbit, 28 Mbit ­ Parameter Blocks (Top or Bottom location) s PROGRAMMING TIME s ERASE SUSPEND and RESUME MODES ­ 10µs by Word typical s 100,000 PROGRAM/ERASE CYCLES per ­ Double Word Program Option BLOCK s ASYNCHRONOUS PAGE MODE READ s 20 YEARS DATA RETENTION ­ Page Width: 4 Words ­ Defectivity below 1ppm/year ­ Page Access: 35ns SRAM ­ Random Access: 85ns, 100ns, 120ns s 4 Mbit (256Kb x16) s DUAL BANK OPERATIONS s LOW V ­ Read within one Bank while Program or DDS DATA RETENTION: 1.0V Erase within the other s POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ­ No delay between Read and Write operations s BLOCK LOCKING Obsolete Product(s) - Obsolete Product(s) ­ All blocks locked at Power up ­ Any combination of blocks can be locked ­ WPF for Block Lock-Down s COMMON FLASH INTERFACE (CFI) ­ 64 bit Unique Device Identifier ­ 64 bit User Programmable OTP Cells February 2003 1/52


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36DR432AD M36DR432B.pdf Datasheet