Part # 2N5210 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5210 MMBT5210 NPN General Purpose Amplifier

Part Details:

2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1µA to 50 mA. E CB TO-92 E B SOT-23 Mark: 3M Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Col ector-Emitter Voltage 50 V VCBO Col ector-Base Voltage 50 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max. Symbol Characteristic Units 2N5210 MMBT5210 PD Total Device Dissipation 625 350 mW

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2N5210.pdf Datasheet