Part # FQD7N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD7N10 FQU7N10 100V N-Channel MOSF

Part Details:

FQD7N10 / December 2000 QFETTM FQU7N10 FQD7N10 / FQU7N10100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. · Low Crss ( typical 10 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for low voltage applications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor control. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD7N10 / FQU7N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 5.8 A - Continuous (TC = 100°C) 3.67 A IDM

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FQD7N10.pdf Datasheet