Part # FQD12P10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD12P10 FQU12P10 100V P-Channel MOSF

Part Details:

FQD12P 10 / FQU12P10 QFETTM FQD12P10 / FQU12P10100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 21 nC) planar stripe, DMOS technology. · Low Crss ( typical 65 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D G D-PAK I-PAK G S FQD Series G D S FQU Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD12P10 / FQU12P10 Units VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -9.4 A - Continuous (TC = 100°C) -6.0 A IDM Drain Current - Pulsed (Note 1) -37.6 A VGSS Gate-Source Voltage

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FQD12P10.pdf Datasheet