Part # SGS6N60UF datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: SGS6N60UF Ultra-Fast IGB


Part Details:

SGS6N60UF April 2001 IGBT SGS6N60UFUltra-Fast IGBT General Description Features Fairchild s UF series of Insulated Gate Bipolar Transistors · High speed switching (IGBTs) provides low conduction and switching losses. · Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A The UF series is designed for applications such as motor · High input impedance control and general inverters where high speed switching isa required feature. ApplicationAC & DC Motor controls, general purpose inverters, robotics, servo controls C G TO-220F E G C E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description SGS6N60UF Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V Collector Current @ T I C = 25°C 6 A C Collector Current @ TC = 100°C 3 A ICM (1) Pulsed Collector Current 25 A PD Maximum Power Dissipation @ TC = 25°C 22 W Maximum Power Dissipation @ TC = 100°C 9


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SGS6N60UF.pdf Datasheet