Part # FQB2P40 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB2P40 FQI2P40 400V P-Channel MOSF

Part Details:

FQB2P December 2000 40 / QFETTM F FQB2P40 / FQI2P40 QI2P 400V P-Channel MOSFET 40 General Description Features These P-Channel enhancement mode power field effect · -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 10 nC) planar stripe, DMOS technology. · Low Crss ( typical 6.5 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for electronic lamp ballasts based on thecomplementary half bridge topology. D S! G ! ! G S D2-PAK I2-PAK G D S FQB Series FQI Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB2P40 / FQI2P40 Units VDSS Drain-Source Voltage -400 V ID Drain Current - Continuous (TC = 25°C) -2.0 A - Continuous (TC = 100°C)

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FQB2P40.pdf Datasheet