Part # FQP32N20C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQP32N20C FQPF32N20C 200V N-Channel MOSF


Part Details:

FQP32N20C/FQPF32N20C QFET® FQP32N20C/FQPF32N20C200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. · Low Crss ( typical 185 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supplies and motor controls. D G TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N20C FQPF32N20C Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 28.0 28.0 * A - Continuous (TC = 100°C) 17.8 17.8 * A IDM Drain Current - Pulsed


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FQP32N20C.pdf Datasheet