Part # 2SA1425 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


Part Details:

2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1426 Audio Power Amplifier Applications Unit: mm · High hFE: hFE = 100 to 320 · 1-W output applications · Complementary to 2SC3666. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C JEDEC Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-7D101A Electrical Characteristics (Ta = 25°C) Weight: 0.2 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO VCB = -35 V, IE = 0


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2SA1425.pdf Datasheet