Part # FQB8N60C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB8N60C FQI8N60C 600V N-Channel MOSF

Part Details:

FQB8N60C / FQI QFETTM FQB8N60C / FQI8N60C600V N-Channel MOSFET 8N60C General Description Features These N-Channel enhancement mode power field effect · 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 28 nC) planar stripe, DMOS technology. · Low Crss ( typical 12 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. D ! D G! D2-PAK I2-PAK G S FQB Series FQI Series G D S ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB8N60C / FQI8N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 7.5 A - Continuous (TC = 100°C) 4.6 A IDM

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FQB8N60C.pdf Datasheet