Part # FQA8N80C_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA8N80C_F109 800V N-Channel MOSF

Part Details:

FQA8N80C_F109 800V N-Ch November 2007 QFET ® FQA8N80C_F109800V N-Channel MOSFET Features Description · 8.4A, 800V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 13pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to annel MOSFET · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA8N80C_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 8.4 A - Continuous (TC = 100°C) 5.3 A IDM Drain Current - Pulsed (Note 1) 33.6 A VGSS Gate-Source Voltage ± 30 V EAS

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FQA8N80C_F109.pdf Datasheet