Part # FDZ2554P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSF

Part Details:

FDZ2554P Monolithic Common Dr June 2007 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power Trench® BGA MOSFET -20V, -6.5A, 28mFeatures General Description Max rDS(on) = 28m at VGS = -4.5V, ID = -6.5A Combining Fairchild s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P Max rDS(on) = 45m at VGS = -2.5V, ID = -5A minimizes both PCB space and rDS(on). This monolithic common Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent Ultra-thin package: less than 0.80 mm height when mounted thermal transfer characteristics, high current handling capability, to PCB ultra-low profile packaging, low gate charge, and low rDS(on). ain Outstanding thermal transfer characteristics: significantly bet- Applications ter than SO-8 P-Ch Battery management Ultra-low Qg x rDS(on) figure-of-merit Load Switch High power and current handling capability annel 2.5V S Battery protection RoHS Compliant S G p Q1 ecified Power PowerTrench D Q2 G S Bottom Top MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±12 V Drain Current -Continuous (Note 1a) -6.5 ® ID

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FDZ2554P.pdf Datasheet