Part # FQD30N06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD30N06 FQU30N06 60V N-Channel MOSF

Part Details:

FQD30N06 May 2001 QFETTM / FQD30N06 / FQU30N06 FQU30 60V N-Channel MOSFET General Description Features N06 These N-Channel enhancement mode power field effect · 22.7A, 60V, RDS(on) = 0.045 @ VGS = 10V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 19 nC) planar stripe, DMOS technology. · Low Crss ( typical 40 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 150oC maximum junction temperature rating suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD30N06 / FQU30N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 22.7

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FQD30N06.pdf Datasheet