Part # BC517 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: BC517 NPN Darlington Transistor

Part Details:

BC January 2005 517 NP N Darlington T BC517NPN Darlington Transistor · This device is designed for applications requiring extremely high current gain at currents to 1.0A. · Sourced from process 05. rans istor TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 2.0mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage

Please click the following link to download the datasheet:

BC517.pdf Datasheet