Part # 2SA2142 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Triple Diffused Type


Part Details:

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit: mm · High breakdown voltage: VCEO = -600 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25 A Ta = 25°C 1 Collector power Pc W dissipation Tc = 25°C 15 Junction temperature Tj 150 °C Storage temperature range T stg -55 to 150 °C JEDEC JEITA TOSHIBA 2-7J1A


Please click the following link to download the datasheet:

2SA2142.pdf Datasheet