Part # FQB6N40C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB6N40C FQI6N40C 400V N-Channel MOSF

Part Details:

FQB6N40 QFETTM C/F FQB6N40C/FQI6N40C Q 400V N-Channel MOSFET I6N40 General Description Features C These N-Channel enhancement mode power field effect · 6A, 400V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 16nC) planar stripe, DMOS technology. · Low Crss ( typical 15pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,electronic lamp ballasts based on half bridge topology. D D ! " ! " G ! " ! " D2-PAK I2-PAK G S FQB Series FQI Series G D S ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB6N40C/FQI6N40C Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 6 A

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FQB6N40C.pdf Datasheet