Part # 2SC5810 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type


Part Details:

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2.0 Collector current A Pulse ICP 3.5 Base current IB 200 mA DC 0. P C 8 Collector power W dissipation t = 10 s (Note) 1.6 JEDEC Junction temperature T JEITA j 150 °C


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2SC5810.pdf Datasheet