Part # FDFMA2P029Z datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: datasheet

Part Details:

FDFMA2P029Z Integrated P-Channel PowerTrench March 2008 FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ­20V, ­3.1A, 95m:Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m: at VGS = ­4.5V, ID = ­3.1A portable applications. It features a MOSFET with very low on- Max rDS(on) = 141m: at VGS = ­2.5V, ID = ­2.5A state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. HBM ESD protection level > 2.5kV (Note 3) Schottky The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode VF < 0.37V @ 500mA applications. Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant ® Pin 1 MOSFET and Schottky Diode A NC D A 1 6 C NC 2 5 G D 3 4 S MicroFET 2X2 C G S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage ­20 V VGS Gate to Source Voltage ±12 V Drain Current -Continuous (Note 1a) ­3.1 ID A -Pulsed

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FDFMA2P029Z.pdf Datasheet