Part # 2SC5075 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Triple Diffused Type

Part Details:

2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm · High breakdown voltage: VCEO = 400 V · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 50 Collector current mA Pulse ICP 100 Base current IB 25 mA Collector power dissipation PC 900 mW Junction temperature Tj 150 °C JEDEC TO-92MOD Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-5J1A Electrical Characteristics Weight: 0.36 g (typ.) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max

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2SC5075.pdf Datasheet