Part # FQB9N50C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB9N50C FQI9N50C 500V N-Channel MOSF

Part Details:

FQB9N50 QFETTM C/F FQB9N50C/FQI9N50C Q 500V N-Channel MOSFET I9N50 General Description Features C These N-Channel enhancement mode power field effect · 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 28 nC) planar stripe, DMOS technology. · Low Crss ( typical 24 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. D ! D " ! " G ! " ! " D2-PAK I2-PAK G S FQB Series FQI Series G D S ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB9N50C/FQI9N50C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 9 A

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FQB9N50C.pdf Datasheet