Part # KSB1366 datasheet

Part Manufacturer: Motorola


Part Description: KSB1366 PNP Epitaxial Silicon Transistor

Part Details:

KSB136 6 KSB1366 LOW FREQUENCY POWER AMPLIFIER· Complement to KSD2012 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.5 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max.

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KSB1366.pdf Datasheet