Part # FQB5N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB5N60 FQI5N60 600V N-Channel MOSF

Part Details:

60 April 2000 I5N FQ QFETTM FQB5N60 / FQI5N60600V N-Channel MOSFET B5N60 /FQ General Description Features These N-Channel enhancement mode power field effect · 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 16 nC) planar stripe, DMOS technology. · Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N60 / FQI5N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 5.0 A - Continuous (TC = 100°C)

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FQB5N60.pdf Datasheet