Part # FDG6304P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6304P Dual P-Channel, Digital F

Part Details:

July 1999 FDG6304P Dual P-Channel, Digital FET General Description Features -25 V, -0.41 A continuous, -1.5 A peak. These dual P-Channel logic level enhancement modefield effect transistors are produced using Fairchild s R = 1.1 @ V = -4.5 V, DS(ON) GS proprietary, high cell density, DMOS technology. This R = 1.5 @ V = -2.7 V. DS(ON) GS very high density process is especially tailored to Very low level gate drive requirements allowing direct minimize on-state resistance. This device has been operation in 3 V circuits (V < 1.5 V). designed especially for low voltage applications as a GS(th) replacement for bipolar digital transistors and small Gate-Source Zener for ESD ruggedness signal MOSFETs. (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 S2 G2 1 or 4 * 6 or 3 D1 .04 2 or 5 5 or 2 D2 G1 S1 SC70-6 3 or 6 4 or 1 * *The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter

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FDG6304P.pdf Datasheet