Part # FQA6N90_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA6N90_F109 900V N-Channel MOSF

Part Details:

FQA6N90_F109 900V N-Chan September 2007 QFET ® FQA6N90_F109900V N-Channel MOSFET Features Description · 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 40 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 17pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching nel MOSFET · 100% avalanche tested· Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA6N90_F109 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 6.4 A - Continuous (TC = 100°C) 4.0 A IDM Drain Current - Pulsed (Note 1) 25.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2)

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FQA6N90_F109.pdf Datasheet