Part # 2N5962 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5962 MMBT5962 NPN General Purpose Amplifier

Part Details:

2N5962/ MMBT5962 Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Col ector-Base Voltage 45 V VEBO Emitter-Base Voltage 8.0 V IC Col ector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5962 *MMBT5962 PD Total Device Dissipation 625 350 mW Derate above 25°C

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2N5962.pdf Datasheet