Part # FQA8N100C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA8N100C 1000V N-Channel MOSF


Part Details:

FQA8N1 September 2005 QFET ® 00C 10 FQA8N100C 1000V N-Channel MOSFET 00V N-Cha Features Description · 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge (typical 53 nC) DMOS technology. nne · Low Crss (typical 16 pF) This advanced technology has been especially tailored to mini- l · Fast switching mize on-state resistance, provide superior switching perfor- MOS mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi- · Improved dv/dt capability cient switched mode power supplies. FET D ! " ! " G! " ! " TO-3P ! FQA Series S G D S Absolute Maximum Ratings Symbol Parameter FQA8N100C Unit VDSS Drain-Source Voltage 1000 V ID Drain Current - Continuous (TC = 25°C) 8 A - Continuous (TC = 100°C) 5 A


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FQA8N100C.pdf Datasheet