Part # 2N5245 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5245 N-Channel RF Amplifier

Part Details:

2N52 45 2N5245 N-Channel RF Amplifier· This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. · Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off CharacteristicsV(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 -30 V IGSS Gate Reverse Current VGS = 25V, VDS = 0 -1.0 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA -1.0 -0.6 V

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2N5245.pdf Datasheet