Part # FDN358P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN358P Single P-Channel, Logic Level, PowerTrench MOSF


Part Details:

FDN3 January 2003 58 P FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced · ­1.5 A, ­30 V. R using Fairchild Semiconductor advanced Power Trench DS(ON) = 125 m @ VGS = ­10 V process that has been especially tailored to minimize RDS(ON) = 200 m @ VGS = ­4.5 V the on-state resistance and yet maintain low gate charge for superior switching performance. · Low gate charge (4 nC typical) These devices are well suited for portable electronics · High performance trench technology for extremely applications: load switching and power management, low R battery charging circuits, and DC/DC conversion. DS(ON) . · High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G S TM G SuperSOT -3 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­30 V VGSS Gate-Source Voltage ±20 V ID Drain Current ­ Continuous (Note 1a) ­1.5 A ­ Pulsed ­5


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FDN358P.pdf Datasheet