Part # FQB9N25C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB9N25C FQI9N25C 250V N-Channel MOSF


Part Details:

FQB9N25C/FQI9N25C QFET® FQB9N25C/FQI9N25C250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. · Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. D D G D2-PAK I2-PAK G S FQB Series FQI Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB9N25C / FQI9N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 8.8 A - Continuous (TC = 100°C) 5.6 A IDM Drain Current - Pulsed (Note 1)


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FQB9N25C.pdf Datasheet