Part # FCD7N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCD7N60_FCU7N60 600V N-Channel MOSF


Part Details:

FCD7N60/FCU7N60 600V N-Cha July 2006 SuperFETTM FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge · Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and · Ultra low gate charge (typ. Qg=23nC) lower gate charge performance. This advanced technology has been tailored to minimize · Low effective output capacitance (typ. Coss.eff=60pF) conduction loss, provide superior switching performance, and nnel MOSF · 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. ET D D G D-PAK G S G D S I-PAK FCD Series FCU Series S Absolute Maximum Ratings Symbol Parameter FCD7N60/FCU7N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 7 A - Continuous (TC = 100°C) 4.4 A IDM Drain Current - Pulsed (Note 1) 21 A VGSS Gate-Source voltage ± 30


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FCD7N60.pdf Datasheet