Part # FQA7N90M_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA7N90M_F109 900V N-Channel MOSF

Part Details:

FQA7N90M_F109 900V N-Channel MOSFET September 2007 QFET ® FQA7N90M_F109900V N-Channel MOSFET Features Description · 7.0A, 900V, RDS(on) = 1.8 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 40 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 17pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA7N90M_F109 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 7.0 A - Continuous (TC = 100°C) 4.4 A IDM Drain Current - Pulsed (Note 1) 28 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy

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FQA7N90M_F109.pdf Datasheet