Part # FDZ193P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDZ193P P-Channel 1.7V PowerTrench® WL-CSP MOSF

Part Details:

P-Chann December 2006 el 1.7V P FDZ193P tm P-Channel 1.7V PowerTrench® WL-CSP MOSFET -20V, -1A, 90m owerTrench Features General Description Max r Designed on Fairchild s advanced 1.7V PowerTrench® process DS(on) = 90m at VGS = -4.5V, ID = -1A with state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1A FDZ193P minimizes both PCB space and rDS(on). This advanced Max r WLCSP MOSFET embodies a breakthrough in packaging DS(on) = 300m at VGS = -1.7V, ID = -1A ® technology which enables the device to combine excellent WL-CSP MOSFET Occupies only 1.5 mm2 of PCB area Less than 50% of the thermal transfer characteristics, ultra-low profile packaging, low area of 2 x 2 BGA gate charge, and low rDS(on). Ultra-thin package: less than 0.65 mm height when mounted Application to PCB RoHS Compliant Battery management Load switchBattery protection PIN 1 PIN 1 S S S G D S G D D BOTTOM TOP MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -20

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FDZ193P.pdf Datasheet