Part # FDC642P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: sot23n.tstT65.T65


Part Details:

FDC642P July 1999 FDC642PP-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced -4 A, -20 V. R = 0.065 @ V = -4.5 V DS(ON) GS using Fairchild s advanced PowerTrench process that R = 0.100 @ V = -2.5 V DS(ON) GS has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Fast switching speed. These devices have been designed to offer exceptional Low gate charge (7.2nC typical). power dissipation in a very small footprint for High performance trench technology for extremely applications where the larger packages are impractical. low R . DS(ON) Applications SuperSOTTM-6 package: small footprint (72% smaller Load switch than standard SO-8); low profile (1mm thick). Battery protection Power management S 1 6 D D 2 5 G D 3 4 TM D SuperSOT -6 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage


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FDC642P.pdf Datasheet