Part # 2N3820 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N3820 Epitaxial Silicon Transistor


Part Details:

2N38 20 2N3820 P-Channel General Purpose Amplifier· This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. · Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VGS Gate-Source Voltage 20 V IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off CharacteristicsV(BR)GSS Gate-Source Breakdwon Voltage IG = 10µA, VDS = 0 20 V IGSS Gate Reverse Current VGS = 10V, VDS = 0 20 nA VGS(off) Gate-Source Cutoff Voltage VDS = -10V, ID = -10µA 8.0 V


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2N3820.pdf Datasheet