Part # FJV3114R datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FJV3114R

Part Details:

FJV31 1 November 2006 4R NPN Ep FJV3114R tm NPN Epitaxial Silicon Transistor it Features axial Silicon T · Switching circuit, Inverter, Interface circuit, Driver Circuit· Built in bias Resistor (R1=4.7K, R2=47K)· Complement to FJV4114R Eqivalent Circuit r 3 C ansistor R34 2 B E SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TSTG Storage Temperature Range -55~150 °C TJ Junction Temperature 150 °C PC

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FJV3114R.pdf Datasheet