Part # FQB32N12V2 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB32N12V2 FQI32N12V2 120V N-Channel MOSF


Part Details:

FQB32N12 QFET® V2/ FQB32N12V2/FQI32N12V2 F 120V N-Channel MOSFET QI32 General Description Features N These N-Channel enhancement mode power field effect · 32A, 120V, R 1 DS(on) = 0.05 @VGS = 10 V 2 transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 41 nC) V planar stripe, DMOS technology. · Low Crss ( typical 70 pF) 2 This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for DC to DC converters, sychronous rectification,and other applications lowest Rds(on) is required. D ! D " ! " G ! " ! " D2-PAK I2-PAK G S FQB Series FQI Series ! G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB32N12V2/FQI32N12V2 Units VDSS Drain-Source Voltage 120 V


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FQB32N12V2.pdf Datasheet