Part # 2SC2655 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Part Details:

2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High-speed switching: tstg = 1.0 µs (typ.) · Complementary to 2SA1315 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation PC 900 mW Junction temperature T JEDEC TO-92MOD j 150 °C Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 1 2004-07-07 2SC3328 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.

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2SC2655.pdf Datasheet