Part # FDW2512NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSF


Part Details:

FDW2512NZ D e May 2008 FDW2512NZ u Dual N-Channel 2.5V Specified PowerTrench® al MOSFET N-Channel 2. Features General Description ! 6A, 20V rDS(ON) = 0.028, V This N-Channel MOSFET is produced using Fairchild GS = 4.5V Semiconductor s advanced PowerTrench process that has rDS(ON) = 0.036, VGS = 2.5V been especially tailored to minimize the on-state resistance ! Extended V and yet maintain low gate charge for superior switching GS range (±12 V) for battery applications performance. These devices are well suited for portable ! HBM ESD Protection Level of 3.5kV Typical (note 3) electronics applications. 5V Speci ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications fie ! Load switch d Power ! Battery charge ! Battery disconnect circuits Tren D1 D2 ch® MOSFET G2 S2 S2 D2 G1 S1 G1 G2 S1 D1 S1 S2 Pin 1 TSSOP-8 ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDW2512NZ Rev. A1


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FDW2512NZ.pdf Datasheet