Part # FQB17P06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB17P06 FQI17P06 60V P-Channel MOSF

Part Details:

FQB17P May 2001 QFETTM 06 / FQI1 FQB17P06 / FQI17P0660V P-Channel MOSFET 7P06 General Description Features These P-Channel enhancement mode power field effect · -17A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 21 nC) planar stripe, DMOS technology. · Low Crss ( typical 80 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · 175°C maximum junction temperature rating well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. S D ! G ! ! G S D2-PAK I2-PAK G D S FQB Series FQI Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB17P06 / FQI17P06 Units VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -17 A - Continuous (TC = 100°C)

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FQB17P06.pdf Datasheet