Part # FDG6335N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6335N 20V N-Channel PowerTrench MOSF

Part Details:

FDG63 October 2001 35N FDG6335N20V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed · 0.7 A, 20 V. RDS(ON) = 300 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional RDS(ON) = 400 m @ VGS = 2.5 V switching PWM controllers. It has been optimized use · Low gate charge (1.1 nC typical) in small switching regulators, providing an extremelylow RDS(ON) and gate charge (QG) in a small package. · High performance trench technology for extremely Applications low RDS(ON) · DC/DC converter · Compact industry standard SC70-6 surface mount · package Power management · Loadswitch S G D S 1 or 4 6 or 3 D G 2 or 5 5 or 2 G D G Pin 1 S D 3 or 6 4 or 1 S SC70-6 Dual N-Channel The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current

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FDG6335N.pdf Datasheet