Part # FQA10N80_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA10N80_F109 800V N-Channel MOSF

Part Details:

FQA10N80_F109 800V N-Channel MOSF August 2007 QFET ® FQA10N80_F109800V N-Channel MOSFET Features Description · 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 55 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 24pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. ET D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA10N80_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 9.8 A - Continuous (TC = 100°C) 6.19 A IDM Drain Current - Pulsed (Note 1) 39.2 A VGSS Gate-Source Voltage ± 30 V EAS

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FQA10N80_F109.pdf Datasheet