Part # IRLS640A datasheet

Part Manufacturer: Motorola

Motorola

Part Description: RLS640A Advanced Power MOSF


Part Details:

Advanced Power MOSFET IRLS640A FEATURES BVDSS = 200 V ! Logic-Level Gate Drive RDS(on) = 0.18 ! Avalanche Rugged Technology! Rugged Gate Oxide Technology ID = 9.8 A ! Lower Input Capacitance! Improved Gate Charge TO-220F ! Extended Safe Operating Area! Lower Leakage Current : 10 A (Max.) @ VDS = 200V! Lower RDS(ON) : 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage DSS 200 V Continuous Drain Current (TC=25) 9.8 ID A Continuous Drain Current (TC=100) 6.2 IDM Drain Current-Pulsed 63 A VGS Gate-to-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 64 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 4.0 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns Total Power Dissipation (TC=25) 40


Please click the following link to download the datasheet:

IRLS640A.pdf Datasheet