Part # 2SA1432 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Part Details:

2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1761 Power Amplifier Applications Unit: mm Power Switching Applications · Low collector-emitter saturation voltage: VCE (sat) = -0.5 V (max) (IC = -0.5 A) · High-speed switching: tstg = 0.2 µs (typ.) · Complementary to 2SC4604. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Base current IB -0.6 A Collector power dissipation PC 900 mW JEDEC TO-92MOD Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 1 2004-07-26 2SA1761 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max

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2SA1432.pdf Datasheet