Part # 2SA1933 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Part Details:

2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications Unit: mm DC-DC Converter Applications · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -3 A) · High-speed switching: tstg = 1.0 µs (typ.) · Complementary to 2SC5176 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V DC IC -5 Collector current A Pulse ICP -8 Base current IB -1 A JEDEC Collector power dissipation PC 1.8 W JEITA Junction temperature Tj 150 °C TOSHIBA 2-10T1A Storage temperature range Tstg -55 to 150 °C Weight: 1.5 g (typ.) 1 2004-07-07 2SA1934 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.

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2SA1933.pdf Datasheet